Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si | Light: Science & Applications
Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer
Coatings | Free Full-Text | Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact
Group III-nitride lasers: a materials perspective - ScienceDirect
Figure 1 from Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure | Semantic Scholar
BluGlass Announces Entry into GaN Laser Diode Business
GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature
Sumitomo, Sony tackle technical barriers to high output power GaN laser diode < News(en) < KIPOST english < 기사본문 - KIPOST(키포스트)
High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions
Haojun Zhang and laser team are featured on Semiconductor Today | News | Solid State Lighting & Energy Electronics Center