Group III-nitride lasers: a materials perspective - ScienceDirect
KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | News | Newsroom | KYOCERA
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4
ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE Times Asia
Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar
Indium gallium nitride laser diode directly integrated with silicon
Structure of GaN laser. | Download Scientific Diagram
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Smart-cut-like laser slicing of GaN substrate using its own nitrogen | Scientific Reports
Semiconductor Today features "Semi-polar indium gallium nitride laser diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and Mathematical Sciences and Engineering
Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram
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A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
Role of dislocations in nitride laser diodes with different indium content | Scientific Reports
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
![PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/b56c6c3f707aa5ecd68e9ff9aabdf10e32045f61/3-Figure1-1.png "PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar")
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar
Researching | GaN-based ultraviolet microdisk laser diode grown on Si
Reducing power losses in indium gallium nitride laser diodes on silicon
GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths | Science
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si | ACS Photonics
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram
Deep UV aluminium gallium nitride laser diode at 271.8nm wavelength
BluGlass — Brighter future, lower temperature - Edison Group
Figure 1 from Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
Laser slicing: A thin film lift-off method for GaN-on-GaN technology - ScienceDirect
